摘要：本文以制备的MoS2/CsPbBr3异质结器件为研究目标，通过低压化学气相沉积法（LPCVD）制备MoS2薄膜，用湿法转移将MoS2薄膜转移到电极上，并在MoS2器件上旋涂CsPbBr3溶液制造MoS2/CsPbBr3异质结器件。通过MoS2、CsPbBr3和MoS2/CsPbBr3异质结器件的紫外可见光吸收光谱，分析出MoS2/CsPbBr3的吸收光谱为MoS2和CsPbBr3的共同作用；通过CsPbBr3、MoS2/CsPbBr3的光致发光（PL）光谱及其荧光寿命，分析出MoS2/CsPbBr3器件中光致电子从CsPbBr3导带转移到MoS2导带上替代了CsPbBr3的光致电子与空穴的重新复合。通过测量MoS2/CsPbBr3器件在强度范围为0至61.8mW/cm2，在442nm激发的电流与偏置电压（I-V）特性，计算分析得出器件4.4A/W的响应度和302％量子效率，良好的电流开关比（所以的均大于30），高响应时间（上升时间0.72ms，下降时间1.01ms）。结果表明，MoS2/CsPbBr3异质结器件有望成为高性能的光电探测器。
关键词MoS2；CsPbBr3；异质结器件；量子效率；响应度；电流开关比
毕业设计说明书外文摘要
Title High-performance hybrid CsPbBr3 perovskite/TMDCs （transition metal dichalcogenides） photodetector
Abstract：In this paper, we intend to prepare MoS2/CsPbBr3 heterojunction devices，which can be used as a high-performance photodetector. The MoS2 film was prepared by
low pressure chemical vapor deposition (LPCVD) and transferred to the electrode by wet transfer. And preparation of MoS2/CsPbBr3 heterogeneous junctions by spraying CsPbBr3 solution on MoS2 devices. The results show that the absorption spectra of MoS2/ CsPbBr3 are the combined action of MoS2 and CsPbBr3 by UV-visible absorption spectroscopy of MoS2, CsPbBr3 and MoS2/CsPbBr3 heterojunction devices. And photo-induced electrons are transferred from the CsPbBr3 perovskite to the MoS2 monolayer to fill the empty states, rather than the recombination of photo-induced electron-hole pairs. By measuring and analyzing the I-V curves excited of MoS2/CsPbBr3 at 442nm with a semiconductor laser under different illumination intensities ranging from 0 to 61.8 mW/cm2, a high performance photodetector is obtained. The MoS2/CsPbBr3 heterogeneous junctions has high responsivity (R) of 4.4 A/W, external quantum efficiency (EQE) of 302% under illumination of 442 nm at 10 V, favorable current on/off ratio (all current on/off ratio > 30) and the short rising and decay time.
Keywords MoS2；CsPbBr3；heterojunction；responsivity；current on/off ratio； external quantum efficiency
目次
1引言.....1
1.1研究背景.....1
1.2MoS2/CsPbBr3异质结器件....2
1.2.1MoS2薄膜...2
1.2.2无机钙钛矿（CsPbX3）量子点...2
1.2.3异质结及其能带图[41].....2
1.2.4光电探测器.4
1.3课题提出.....4
2实验与方法.....6
2.1仪器与试剂...6
2.1.1实验中所用的试剂.6
2.1.2实验中所用的仪器.6
2.2实验与制备...7
2.2.1MoS2薄膜的制备（LPCVD）7
2.2.2CsPbBr3溶液的制备9
2.2.3异质结的制备.....9
2.3测试与表征...9
2.3.1形貌表征...9
2.3.2光学性能表征.....9
2.3.3光电性能表征.....9
3结果与讨论....10
3.1形貌及成分..10
3.1.1MoS2/CsPbBr3器件的光学显微镜图片及示意图.10
3.1.2MoS2的原子力显微分析..10
3.1.3CsPbBr3的SEM和XRD分析.....11
3.2光学性能表征11
3.2.1MoS2、CsPbBr3和MoS2/CsPbBr3的吸收光谱....11
3.2.2CsPbBr3和MoS2/CsPbBr3的PL光谱及荧光寿命12
3.3光电性能表征13
3.3.1入射光功率对光电性能的影响..13 高性能二维过渡金属硫化物及钙钛矿CsPbBr3纳米晶异质结器件:http://www.chuibin.com/cailiao/lunwen_205122.html