Al/CuO肖特基结换能元芯片设计与制备方法研究
关键词：Al/CuO复合薄膜 肖特基结 芯片 电性能表征
毕业论文设计说明书外文摘要
Title Design and Preparation methods of Al/CuO Schottky Structure Transducer Element Chip
Abstract
Al/CuO multilayer films are composed of alternately deposited Al and CuO films, which can maintain oxidation-reduction reaction under specific conditions. During previous investigation, it is found that threshold of electrical stimulation exists for Schottky Barrier structured Al/CuO multilayer films, and the reasons can be related to the series surface contact Schottky junctions formed between inpidual Al and CuO films. Once initiated by electrical stimulation, Al/CuO multilayer films explode, which releases not only Joule heat, but also chemical reaction heat between CuO and Al, resulting in the generation of high temperature plasma. Based on these experimental results, Hall effect device was applied to test the conductive type, carrier concentration, electrical resistivity and Hall mobility measurements of the CuO film. The Al / CuO transducer element chip with Schottky structure was designed and fabricated and then characterized electrically by the breakdown voltage meter and the energy storage electro-explosive device. The results showed the breakdown voltage was 1.5V. Moreover, different area of bridge transducer element chip was ignited 100% at the same ignition method and the ignition voltage was 90V.
Keyword: Al/CuO multilayer films , Schottky structure, Chip, Electrical characterization
目 次
1绪论 1
1.1Al/CuO薄膜的概念 1
1.2 国内外研究现状 2
1.3 本论文研究内容 5
2 Al/CuO肖特基结换能元芯片的设计与制备 6
2.1 CuO薄膜的半导体性能测试 6
2.2 Al/CuO肖特基结换能元芯片的设计 7
2.3 Al/CuO肖特基结换能元芯片的制备 8
2.3.1 光刻 9
2.3.2 磁控溅射 12
3 Al/CuO肖特基结换能元芯片电性能表征 17
3.1 击穿电压测试 17
3.2 电爆性能测试 18
4结 论 22
5致 谢 23
6参考文献24
1 绪论
1.1 Al/CuO薄膜的概念
Al/CuO复合薄膜是一种由多层Al薄膜和多层CuO薄膜相互叠加而成新结构形式的含能复合薄膜，理论能量密度为4kJ/g、21kJ/cm3。在外界能量激发下，Al/CuO复合薄膜中的Al和CuO会发生氧化还原反应释放出化学反应热，产生的热量可以使反应区以特定的速度发生自蔓燃烧反应，具有反应瞬间完成、放热量大等特点。图1.1是含能复合薄膜的结构和自蔓燃烧反应示意图。
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