MgZnO薄膜制备及其光电探测器研究
关键词 非晶MgZnO 薄膜 结构性能 光学性能
Title Preparation and Photodetector research of MgZnO films
Abstract
MgZnO semiconductor films have absorbed much attention as a kind of new
photovoltaic materials for wide band gap, broad sources of raw
materials, low price and nontoxic by implementing adjustable band gap
continuously. The band gap of MgZnO films has been achieved adjustable
continuously within a certain range by varying the content of Mg,the
sputtering power and other factors. As a result,the light-emitting
device has been prepared which was widely used in Blu-ray to ultraviolet
spectrum region to make its use more widely. By controlling sputtering
power and argon oxygen ratio, RF magnetron sputtering has been used to
deposit amorphous MgZnO thin film on silicon and glass substrates. The
structure and optical properties of the films were analyzed through
detection means of XRD, SEM, PL and transmittance. Experimental results
show that amorphous MgZnO films have smooth surface and poor
crystallinity. There is little change in position of the peak at
different sputtering power and it is near ultraviolet light-emitting.
The change in the ratio of argon-oxygen can not make Mg have a good
combination with the substrate. The film has a high transmittance in
the visible range and the change of the sputtering power makes its band
gap gradually change to the ultraviolet region.
Keywords amorphous MgZnO films structural characteristics optical properties
目录
1 引言 . 1
1.1 MgZnO薄膜的制备方法 1
1.2 磁控溅射中 MgZnO薄膜性能的影响因素. 3
1.3 MgZnO光电探测器存在的主要问题和发展趋势.. 4
1.4 MgZnO薄膜的研究进展 4
1.5 本课题的研究内容 5
2 MgZnO薄膜的制备及流程 6
2.1 磁控溅射设备 .. 6
2.2 试验参数 . 7
2.3 样品制备流程及注意事项 7
2.4 样品的分析与表征方法 . 8
3 结果分析与讨论 10
3.1 MgZnO薄膜结构特性研究 10
3.2 MgZnO薄膜的光学特性分析.. 19
结 论 . 23
致 谢 . 24
参考文献 25